data sheet 1 05.99 sipmos ? power transistor ? n channel ? enhancement mode ? avalanche-rated pin 1 pin 2 pin 3 g d s type v ds i d r ds(on ) package ordering code buz 22 100 v 34 a 0.055 w to-220 ab c67078-s1333-a2 maximum ratings parameter symbol values unit continuous drain current t c = 27 ?c i d 34 a pulsed drain current t c = 25 ?c i dpuls 136 avalanche current,limited by t jmax i ar 34 avalanche energy,periodic limited by t jmax e ar 15 mj avalanche energy, single pulse i d = 34 a, v dd = 25 v, r gs = 25 w l = 285.5 h, t j = 25 ?c e as 220 gate source voltage v gs 20 v power dissipation t c = 25 ?c p tot 125 w operating temperature t j -55 ... + 150 ?c storage temperature t stg -55 ... + 150 thermal resistance, chip case r thjc 1 k/w thermal resistance, chip to ambient r thja 75 din humidity category, din 40 040 e iec climatic category, din iec 68-1 55 / 150 / 56 buz 22
buz 22 data sheet 2 05.99 electrical characteristics, at t j = 25?c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain- source breakdown voltage v gs = 0 v, i d = 0.25 ma, t j = 25 ?c v (br)dss 100 - - v gate threshold voltage v gs = v ds, i d = 1 ma v gs(th) 2.1 3 4 zero gate voltage drain current v ds = 100 v, v gs = 0 v, t j = 25 ?c v ds = 100 v, v gs = 0 v, t j = 125 ?c i dss - - 10 0.1 100 1 a gate-source leakage current v gs = 20 v, v ds = 0 v i gss - 10 100 na drain-source on-resistance v gs = 10 v, i d = 22 a r ds(on) - 0.05 0.055 w
buz 22 data sheet 3 05.99 electrical characteristics, at t j = 25?c, unless otherwise specified parameter symbol values unit min. typ. max. dynamic characteristics transconductance v ds 3 2 * i d * r ds(on)max, i d = 22 a g fs 10 17.5 - s input capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c iss - 1400 1850 pf output capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c oss - 450 700 reverse transfer capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c rss - 230 370 turn-on delay time v dd = 30 v, v gs = 10 v, i d = 3 a r gs = 50 w t d(on) - 20 30 ns rise time v dd = 30 v, v gs = 10 v, i d = 3 a r gs = 50 w t r - 80 120 turn-off delay time v dd = 30 v, v gs = 10 v, i d = 3 a r gs = 50 w t d(off) - 230 300 fall time v dd = 30 v, v gs = 10 v, i d = 3 a r gs = 50 w t f - 120 160
buz 22 data sheet 4 05.99 electrical characteristics, at t j = 25?c, unless otherwise specified parameter symbol values unit min. typ. max. reverse diode inverse diode continuous forward current t c = 25 ?c i s - - 34 a inverse diode direct current,pulsed t c = 25 ?c i sm - - 136 inverse diode forward voltage v gs = 0 v, i f = 68 a v sd - 1.4 1.8 v reverse recovery time v r = 30 v, i f = l s, d i f /d t = 100 a/s t rr - 130 - ns reverse recovery charge v r = 30 v, i f = l s, d i f /d t = 100 a/s q rr - 0.7 - c
buz 22 data sheet 5 05.99 drain current i d = | ( t c ) parameter: v gs 3 10 v 0 20 40 60 80 100 120 ?c 160 t c 0 4 8 12 16 20 24 28 a 36 i d power dissipation p tot = | ( t c ) 0 20 40 60 80 100 120 ?c 160 t c 0 10 20 30 40 50 60 70 80 90 100 110 w 130 p tot safe operating area i d = | ( v ds ) parameter: d = 0.01 , t c = 25?c 0 10 1 10 2 10 3 10 a i d 10 0 10 1 10 2 v v ds r ds(on) = v ds / i d dc 10 ms 1 ms 100 s t p = 23.0s transient thermal impedance z th jc = | ( t p ) parameter: d = t p / t -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w z thjc 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s t p single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
buz 22 data sheet 6 05.99 typ. output characteristics i d = |( v ds ) parameter: t p = 80 s 0 1 2 3 4 5 6 7 v 9 v ds 0 5 10 15 20 25 30 35 40 45 50 55 60 65 a 75 i d v gs [v] a a 4.0 b b 4.5 c c 5.0 d d 5.5 e e 6.0 f f 6.5 g g 7.0 h h 7.5 i i 8.0 j j 9.0 k k 10.0 l p tot = 125w l 20.0 typ. drain-source on-resistance r ds (on) = |( i d ) parameter: v gs 0 10 20 30 40 50 a 70 i d 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 w 0.17 r ds (on) v gs [v] = a 4.0 v gs [v] = a a 4.5 b b 5.0 c c 5.5 d d 6.0 e e 6.5 f f 7.0 g g 7.5 h h 8.0 i i 9.0 j j 10.0 k k 20.0 typ. transfer characteristics i d = f ( v gs ) parameter: t p = 80 s v ds 3 2 x i d x r ds(on)max 0 1 2 3 4 5 6 7 8 v 10 v gs 0 5 10 15 20 25 30 35 40 45 50 55 60 65 a 75 i d typ. forward transconductance g fs = f ( i d ) parameter: t p = 80 s, v ds 3 2 x i d x r ds(on)max 0 10 20 30 40 50 a 70 i d 0 2 4 6 8 10 12 14 16 18 s 22 g fs
buz 22 data sheet 7 05.99 gate threshold voltage v gs (th) = | ( t j ) parameter: v gs = v ds , i d = 1 ma 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 v 4.6 v gs(th) -60 -20 20 60 100 ?c 160 t j 2% typ 98% drain-source on-resistance r ds (on) = | ( t j ) parameter: i d = 22 a, v gs = 10 v -60 -20 20 60 100 ?c 160 t j 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 w 0.17 r ds (on) typ 98% typ. capacitances c = f ( v ds ) parameter: v gs = 0v, f = 1mhz 0 5 10 15 20 25 30 v 40 v ds -2 10 -1 10 0 10 1 10 nf c c oss c iss c rss forward characteristics of reverse diode i f = | ( v sd ) parameter: t j , t p = 80 s 0 10 1 10 2 10 3 10 a i f 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v 3.0 v sd t j = 25 ?c typ t j = 25 ?c (98%) t j = 150 ?c typ t j = 150 ?c (98%)
buz 22 data sheet 8 05.99 avalanche energy e as = | ( t j ) parameter: i d = 34 a, v dd = 25 v r gs = 25 w , l = 285.5 h 20 40 60 80 100 120 ?c 160 t j 0 20 40 60 80 100 120 140 160 180 200 mj 240 e as typ. gate charge v gs = | ( q gate ) parameter: i d puls = 51 a 0 10 20 30 40 50 60 70 80 nc 100 q gate 0 2 4 6 8 10 12 v 16 v gs ds max v 0,8 ds max v 0,2 drain-source breakdown voltage v (br)dss = | ( t j ) -60 -20 20 60 100 ?c 160 t j 90 92 94 96 98 100 102 104 106 108 110 112 114 116 v 120 v (br)dss
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